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BD638 Datasheet, Inchange Semiconductor

BD638 transistor equivalent, silicon pnp power transistor.

BD638 Avg. rating / M : 1.0 rating-13

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BD638 Datasheet

Application


*Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.

Description


*DC Current Gain - : hFE = 40(Min.)@ IC= -25mA
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.)
*Complement to Type BD637
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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BD638 Page 1 BD638 Page 2

TAGS

BD638
Silicon
PNP
Power
Transistor
Inchange Semiconductor

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